首頁(yè)>H07N60>規(guī)格書(shū)詳情

H07N60中文資料華昕數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

H07N60
廠商型號(hào)

H07N60

功能描述

N-Channel Power Field Effect Transistor

文件大小

61.51 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 Hi-Sincerity Mocroelectronics
企業(yè)簡(jiǎn)稱

HSMC華昕

中文名稱

華昕科技有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-5 15:15:00

H07N60規(guī)格書(shū)詳情

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.

Features

? Robust High Voltage Termination

? Avalanc he Energy Specified

? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    H07N60

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
HJ/華昕
1822+
TO-220F
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
TOSHIBA
16+
SOT-183
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
ADI/亞德諾
2021+
TO23-5
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
HSMC
23+
17+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ADI
23+
SOT23-5
7000
詢價(jià)
hongbright
2023
NA
3210
原廠代理渠道,正品保障
詢價(jià)
TOSHIBA/東芝
23+
TO-220F
10000
公司只做原裝正品
詢價(jià)
TOS
24+
MSOP-8
110
詢價(jià)
ADI
23+
20000
全新、原裝、現(xiàn)貨
詢價(jià)
KEMET
23+
原廠原裝
3340
全新原裝現(xiàn)貨
詢價(jià)