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11D3L

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

H11D3

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D3

HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT

DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart

ISOCOM

ISOCOM COMPONENTS

H11D3

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D3

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D3

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D3M

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

H11D3M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D3M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D3M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    H11D3SM

  • 功能描述：

    晶體管輸出光電耦合器 Hi Volt Phototrans

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 輸入類型：

    DC

  • 最大集電極/發(fā)射極電壓：

    70 V

  • 最大集電極/發(fā)射極飽和電壓：

    0.4 V

  • 絕緣電壓：

    5300 Vrms

  • 電流傳遞比：

    100 % to 200 %

  • 最大正向二極管電壓：

    1.65 V

  • 最大輸入二極管電流：

    60 mA

  • 最大集電極電流：

    100 mA

  • 最大功率耗散：

    100 mW

  • 最大工作溫度：

    + 110 C

  • 最小工作溫度：

    - 55 C

  • 封裝/箱體：

    DIP-4

  • 封裝：

    Bulk

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更多H11D3SM供應(yīng)商 更新時(shí)間2025-3-12 16:19:00

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