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HAT2070R

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistance RDS(on)=11m?typ(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2070R

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2070R

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

HAT2070R-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HT-2070A

LOTTOFLASHDRIVER

HoltekHolmate Technology Corp. (Holtek)

合泰

JT2070FA

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications

EATONEaton All Rights Reserved.

伊頓伊頓公司

MBR2070

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-20.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-free moldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

MBR2070

SCHOTTKYBARRIERRECTIFIERDIODES

Features ●TheplasticpackagecarriesUnderwritersLaboratory ●FlammabilityClassification94V-0 ●Constructionutilizesvoid-free ●moldedplastictechnique ●Lowreverseleakage ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed: ●250°C,0.25”(6.35mm)from

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MBR2070

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

MBR2070CT

20AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

MBR2070CT

DUALSCHOTTKYRECTIFIERS

VOLTAGERANGE:70-100VCURRENT:20A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

MBR2070CT

SWITCHMODE??PowerRectifiers

SWITCHMODE?PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: ?20AmpsTotal(10AmpsPerDiodeLeg) ?Guard–RingforStressProtection ?LowForwardVoltage ?150°COperatingJunctionTemper

Motorola

Motorola, Inc

MBR2070CT

20AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

Features ?GuardRingDieConstructionfor TransientProtection ?LowPowerLoss,HighEfficiency ?HighSurgeCapability ?HighCurrentCapabilityandLowForwardVoltageDrop ?ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplications ?L

DIODES

Diodes Incorporated

MBR2070CT

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR2070CT

Highsurgecapacity

FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection.

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

MBR2070CT

SCHOTTKYBARRIERRECTIFIER

FEATURES ?SchottkyBarrierChip ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?HighSurgeCapability ?HighCurrentCapabilityandLowForwardVoltageDrop ?ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

MBR2070CT

20to100VoltsForwardCurrent-

ReverseVoltage-20to100VoltsForwardCurrent-20.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-free moldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

MBR2070CT

DUALSCHOTTKYRECTIFIERS

FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection.

DSK

Diode Semiconductor Korea

MBR2070CT

SWITCHMODEPOWERRECTIFIERS

SWITCHMODE?PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: ?20AmpsTotal(10AmpsPerDiodeLeg) ?Guard–RingforStressProtection ?LowForwardVoltage ?150°COperatingJunctionTemper

KERSEMI

Kersemi Electronic Co., Ltd.

MBR2070CT

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

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PULSE
23+
AN
6500
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PULSE
23+
AN
6500
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HARWIN
20366
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HARWIN
23+
NA
24432
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HARWIN
21+
35200
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Harwin
2020+
N/A
2608
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Harwin
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2608
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HARWIN
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589610
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Harwin Inc.
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559
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HARWIN
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1000
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更多H2070NLT供應(yīng)商 更新時(shí)間2024-11-16 15:00:00