H27U2G8F2CTR中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES SUMMARY

DENSITY

- 2Gbit: 2048blocks

Nand FLASH INTERFACE

- NAND Interface

- ADDRESS / DATA Multiplexing

SUPPLY VOLTAGE

- Vcc = 3.0/1.8V Volt core supply voltage for Program,

Erase and Read operations.

MEMORY CELL ARRAY

- X8: (2K + 64) bytes x 64 pages x 2048 blocks

- X16: (1k+32) words x 64 pages x 2048 blocks

PAGE SIZE

- X8: (2048 + 64 spare) bytes

- X16:(1024 + 32spare) Words

Block SIZE

- X8: (128K + 4K spare) bytes

- X16:(64K + 2K spare) Words

PAGE READ / PROGRAM

- Random access: 25us (Max)

- Sequential access: 25ns / 45ns (3.0V/1.8V, min.)

- Program time(3.0V/1.8V): 200us / 250us (Typ)

- Multi-page program time (2 pages):

200us / 250us (3.0V/1.8V, Typ.)

BLOCK ERASE / MULTIPLE BLOCK ERASE

- Block erase time: 3.5 ms (Typ)

- Multi-block erase time (2 blocks):

3.5ms/ 3.5ms (3.0V/1.8V, Typ.)

SEQURITY

- OTP area

- Sreial number (unique ID)

- Non-volatile protection option for OTP and Block0(Opt.)

- Hardware program/erase disabled during

power transition

ADDTIONAL FEATURE

- Multiplane Architecture:

Array is split into two independent planes.

Parallel operations on both planes are available, having

program and erase time.

- Single and multiplane copy back program with automatic

EDC (error detection code)

- Single and multiplane page re-program

- Single and multiplane cache program

- Cache read

- Multiplane block erase

Reliability

- 100,000 Program / Erase cycles (with 1bit /528Byte ECC)

- 10 Year Data retention

ONFI 1.0 COMPLIANT COMMAND SET

ELECTRONICAL SIGNATURE

- Munufacture ID: ADh

- Device ID

PACKAGE

- Lead/Halogen Free

- TSOP48 12 x 20 x 1.2 mm

- FBGA63 9 x 11 x 1.0 mm