H27UAG8T2B中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The H27UAG8T2B is a single 3.3V 16Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 512 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8,192-bytes main data storage area with a spare 448-byte district. Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. On chip control logic unit automates erase and program operations to maximize cycle endurance. E/W endurance is stipulated at 3,000 cycles when using relevant ECC and Error management. The H27UAG8T2B is a best solution for applications requiring large nonvolatile storage memory.

■ Multilevel Cell technology

■ Supply Voltage

- 3.3V device : Vcc = 2.7 V ~ 3.6 V

Vcc = 2.7 V ~ 3.6 V

■ Organization

- Page size : 8,640 Bytes(8,192+448 bytes)

- Block size : 256 pages(2M+112K bytes)

- Plane size : 512 blocks

■ Page Read Time

- Random Access: 200 ? (Max.)

- Sequential Access : 25 ? (Min.)

■ Write Time

- Page program : 1600 ? (Typ.)

- Block erase : 2.5 ? (Typ.)

■ Operating Current

- Read

- Program

- Erase

- Standby

■ Hardware Data Protection

- Program/Erase locked during power transitions

■ Endurance

- 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)

■ Data Retention

- 10 Years

■ Package

- TSOP (12x20), 48Pin

- Wafer (Bare Die)

■ Unique ID for copyright protection