H5DU2562GFR-E3C中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

FEATURES

?VDD, VDDQ= 2.5V +/- 0.2V

? All inputs and outputs are compatible with SSTL_2 interface

? Fully differential clock inputs (CK, /CK) operation

? Double data rate interface

? Source synchronous - data transaction aligned to bidirectional data strobe (DQS)

? x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O

? Data outputs on DQS edges when read (edged DQ)

Data inputs on DQS centers when write (centered DQ)

? On chip DLL align DQ and DQS transition with CK transition

? DM mask write data-in at the both rising and falling edges of the data strobe

? All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

? Programmable CAS latency 2/2.5 (DDR200, 266, 333), 3 (DDR400) and 4 (DDR500) supported

? Programmable burst length 2/4/8 with both sequential and interleave mode

? Internal four bank operations with single pulsed/RAS

? Auto refresh and self refresh supported

? tRAS lock out function supported

? 8192 refresh cycles/64ms

?60 Ball FBGA Package Type

? This product is in compliance with the directive pertaining of RoHS.