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HA3-2839-9中文資料HARRIS數據手冊PDF規(guī)格書

HA3-2839-9
廠商型號

HA3-2839-9

功能描述

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

131.12 Kbytes

頁面數量

8

生產廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標識
數據手冊

下載地址一下載地址二

更新時間

2025-2-3 16:50:00

HA3-2839-9規(guī)格書詳情

Description

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Features

? 63A, 600V at TC= +25°C

? Typical Fall Time - 230ns at TJ= +150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

產品屬性

  • 型號:

    HA3-2839-9

  • 制造商:

    Harris Corporation

供應商 型號 品牌 批號 封裝 庫存 備注 價格
INTERSIL
22+23+
DIP-8
7078
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HAR
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700
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A
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b
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Harris
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Harris
97
3
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HARRIS
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5000
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HARRIS
23+
DIP-8
5000
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HAR
22+
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