首頁 >HADC574ZCMD>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Two-WireHallEffectSensorFamily | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TI1Texas Instruments 德州儀器 | TI1 | ||
Octal3-StateNoninvertingDFlip-Flop | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
OctalD-typeflip-flop;positiveedge-trigger;3-state | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
HIGH-SPEEDCOMSLOGICOCTALD-TYPEFLIP-FLOP3-STATE,POSITIVE-EDGERIGGERED | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SPT |
24+ |
DIP |
4000 |
原裝原廠代理 可免費送樣品 |
詢價 | ||
SPT |
2023+ |
DIP |
3500 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
FAIRCHILD |
2016+ |
CDIP28 |
5621 |
只做原裝,假一罰十,內(nèi)存,閃存,公司可開17%增值稅 |
詢價 | ||
SPT |
CDIP |
95+ |
40 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
SPT |
17+ |
CDIP |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
SPT |
22+ |
DIP |
5000 |
進口原裝!現(xiàn)貨庫存 |
詢價 | ||
SPT |
23+ |
DIP |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SPT |
22+23+ |
DIP |
69240 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
SPT |
21+ |
DIP |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
SPT |
21+ |
DIP |
29 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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