零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HAF | HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS: HAF SERIES-HIGH ACCURACY | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國(guó)際 | Honeywell | |
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
HAF
- 制造商:
HONEYWELL
- 制造商全稱:
Honeywell Solid State Electronics Center
- 功能描述:
HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PHILIPS |
05+ |
原廠原裝 |
5016 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
INIERSIL. |
24+ |
SMD |
3200 |
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電! |
詢價(jià) | ||
N/A |
22+ |
QFP |
3000 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
RENESAS |
24+ |
TO252 |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
HIT |
23+ |
TO263 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
Honeywell |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
HITACHI |
24+ |
TO252 |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
RENESAS |
7 |
2600 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | |||
12+ |
TO-263 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | |||
RENESAS |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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