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HAL581SF-E中文資料MICRONAS數(shù)據(jù)手冊(cè)PDF規(guī)格書

HAL581SF-E
廠商型號(hào)

HAL581SF-E

功能描述

Two-Wire Hall-Effect Sensor Family

文件大小

1.73062 Mbytes

頁面數(shù)量

36

生產(chǎn)廠商 Micronas
企業(yè)簡(jiǎn)稱

MICRONAS

中文名稱

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更新時(shí)間

2025-3-30 8:14:00

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HAL581SF-E規(guī)格書詳情

Introduction

This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points.

Features

– current output for two-wire applications

– low current consumption: 5 mA...6.9 mA

– high current consumption: 12 mA...17 mA

– junction temperature range from ?40 °C up to 140 °C.

– operates from 3.75 V to 24 V supply voltage

– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz

– switching offset compensation at typically 145 kHz

– overvoltage and reverse-voltage protection

– magnetic characteristics are robust against mechanical stress effects

– constant magnetic switching points over a wide supply voltage range

– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics

– ideal sensor for applications in extreme automotive and industrial environments

– EMC corresponding to ISO 7637

產(chǎn)品屬性

  • 型號(hào):

    HAL581SF-E

  • 制造商:

    MICRONAS

  • 制造商全稱:

    MICRONAS

  • 功能描述:

    Two-Wire Hall-Effect Sensor Family

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