首頁 >HAT2203C-EL-E>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HAT2203C-EL-E | Silicon N Channel MOS FET Power Switching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
HAT2203C-EL-E | Silicon N Channel MOS FET Power Switching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆（LEM）集團 | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆（LEM）集團 | LEM | ||
LCDMODULE(240?RGB?320Dots) | HYES HYES Optoelectronics, Inc. | HYES | ||
LowChargeInjection,8-ChannelHighVoltageAnalogSwitch GeneralDescription TheSupertexHV2203isalowchargeinjection8-channelhighvoltageanalogswitchintegratedcircuit(IC)intendedforuseinapplicationsrequiringhighvoltageswitchingcontrolledbylowvoltagesignals,suchasmedicalultrasoundimaging,piezoelectrictransducerdriver | SUTEX Supertex, Inc | SUTEX | ||
LowChargeInjection,8-ChannelHighVoltageAnalogSwitch GeneralDescription TheSupertexHV2203isalowchargeinjection8-channelhighvoltageanalogswitchintegratedcircuit(IC)intendedforuseinapplicationsrequiringhighvoltageswitchingcontrolledbylowvoltagesignals,suchasmedicalultrasoundimaging,piezoelectrictransducerdriver | SUTEX Supertex, Inc | SUTEX | ||
LowChargeInjection,8-ChannelHighVoltageAnalogSwitch GeneralDescription TheSupertexHV2203isalowchargeinjection8-channelhighvoltageanalogswitchintegratedcircuit(IC)intendedforuseinapplicationsrequiringhighvoltageswitchingcontrolledbylowvoltagesignals,suchasmedicalultrasoundimaging,piezoelectrictransducerdriver | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號：
HAT2203C-EL-E
- 制造商：
RENESAS
- 制造商全稱：
Renesas Technology Corp
- 功能描述：
Silicon N Channel MOS FET Power Switching
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
2019+PB |
CMFPAK6 |
85400 |
原裝正品 可含稅交易 |
詢價 | ||
RENESAS |
22+23+ |
SOT23 |
29154 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
RENESAS |
23+ |
SOT23 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
Renesas |
19+ |
CMFPAK6 |
200000 |
詢價 | |||
RENESAS |
23+ |
SOT23 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
Renesas |
20+ |
CMFPAK6 |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Renesas |
2023+ |
CMFPAK6 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
只做原裝 |
24+ |
SOT23 |
36520 |
一級代理/放心采購 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Renesas |
24+ |
CMFPAK6 |
85400 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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