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首頁(yè) >HB9630J>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF9630	文件：63.9 Kbytes Page：7 Pages	6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRF9630	文件：175.1 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)	IRF International Rectifier	IRF
IRF9630	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRF9630	文件：547.24 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630	文件：2.9463 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9630	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRF9630	文件：159.1 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630	文件：153.32 Kbytes Page：9 Pages	PowerMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630PBF	文件：153.32 Kbytes Page：9 Pages	PowerMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630PBF	文件：2.9463 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9630PBF	文件：547.24 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630S	文件：179.25 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancher	IRF International Rectifier	IRF
IRF9630S	文件：182.57 Kbytes Page：8 Pages	Repetitiveavalancherated DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630S	文件：181.35 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630SPBF	文件：181.35 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF9630STRLPBFA	文件：181.35 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI9630G	文件：952.14 Kbytes Page：10 Pages	PowerMOSFET FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI9630G	文件：172.98 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-4.3A) ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.	IRF International Rectifier	IRF
IRFI9630G	文件：1.5792 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI9630GPBF	文件：1.5792 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
HB9630J
制造商：
Pentair Technical Products/Hoffman
功能描述：
PHASE JUMPERS, 3+1 & 2+2 Gray, 1.18x3.54x0.12, Copper

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市豪邁興電子有限公司	HBA	AD	2339+	SSOP-8P	5825	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市原品電子科技有限公司	HBA-079827	EUCHNER	23+	SENSOR	128	全新、原裝	詢價(jià)
深圳市賽爾通科技有限公司	HBA07M01		23+		65480		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	HBA07M01	FAIRCHILD/仙童	23+	TO-220	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳龐田科技有限公司	HBA07M01	N/A	2023+環(huán)?，F(xiàn)貨	標(biāo)準(zhǔn)封裝	2500	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價(jià)
深圳市博浩通科技有限公司	HBA07M02	FAIRCHILD	23+	TO263	4500	專業(yè)優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市亞泰盈科電子有限公司	HBA07M02	FAIRCHILD		SOT263	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市仟禧電子有限公司	HBA07M02	FAIRCHILD/仙童	22+	SOT263	20000	保證原裝正品,假一陪十	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	HBA07M02	FAIRCHILD/仙童	22+	SOT263	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市宏捷佳電子科技有限公司	HBA07M02	FAIRCHIL	2023+	TO-263	50000	原裝現(xiàn)貨	詢價(jià)

更多HB9630J供應(yīng)商更新時(shí)間2024-12-29 14:02:00

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