訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>HBDM60V600W-7>詳情
HBDM60V600W-7_DIODES_兩極晶體管 - BJT 200mW Half H-Bridge盈騰興電子
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HBDM60V600W-7
- 功能描述:
兩極晶體管 - BJT 200mW Half H-Bridge
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商
- 企業(yè):
深圳市盈騰興電子科技有限公司
- 商鋪:
- 聯(lián)系人:
李小姐
- 手機:
13728681908
- 詢價:
- 電話:
0755-82739634-23941053
- 傳真:
0755-82701952
- 地址:
深圳市福田上步工業(yè)區(qū)101棟4樓H18
相近型號
- HBD60-SE2MW-SFL
- HBDR1070
- HBDR1130
- HBD60-SE2MW-SEL
- HBDR1370
- HBD60-SE200-SVL
- HBDR1450
- HBD60-SE200-SLL
- HBD60-SE200-SIL
- HBDR20NS
- HBDR30NS
- HBD60-SE200-SHL
- HBD60-SE200-SGL
- HBDR-CFF
- HBDT62131USBH
- HBD60-SE200-SFL
- HBD60-SE200-SEL
- HBE023RH
- HBD5G-SE200-SIL
- HBE024
- HBD5G-SE200-SIH
- HBE024CB
- HBD22S-1157J
- HBE032CB
- HBD060ZGE-ASI
- HBE078CB
- HBE102MBBBLBKR
- HBD060ZGE-AS7
- HBE102MBBCD0KR
- HBD060ZGE-AS6
- HBD060ZGE-AS5
- HBE102MBBCF0KR
- HBD060ZGE-AS13
- HBE102MBBCRAKR
- HBE102MBBCRBKR
- HBD060ZGE-AS12
- HBE102MBBNY0KR
- HBD060ZGE-AS11
- HBE102MBBPYGKR
- HBD060ZGE-AN
- HBD060ZGE-AHS
- HBE102MBBSFCKR
- HBE103MBBCF0KR
- HBD060ZGE-AE
- HBE103MBBCFGKR
- HBD060ZGE-A8
- HBE103MBBCRUKR
- HBD060ZGE-A2H9
- HBE103MBBEJGKR
- HBD060ZGE-A2H