訂購數(shù)量 | 價(jià)格 |
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1+ |
首頁>HBDM60V600W-7>詳情
HBDM60V600W-7_DIODES_兩極晶體管 - BJT 200mW Half H-Bridge中天科工一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HBDM60V600W-7
- 功能描述:
兩極晶體管 - BJT 200mW Half H-Bridge
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商
- 企業(yè):
中天科工半導(dǎo)體(深圳)有限公司
- 商鋪:
- 聯(lián)系人:
李先生
- 手機(jī):
13128990370
- 詢價(jià):
- 電話:
13128990370/微信同號
- 傳真:
原裝正品
- 地址:
深圳市福田區(qū)賽格廣場54層5406-5406B
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