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HCC40109BKT

Rad-hard, high voltage, CMOS logic series

Features ?ESCCqualified ?18VAbsolutemaximumratings ?3Vto15Voperatingvoltage ?Hermeticpackages ?Rad-hard100krad(Si)TID ?SELimmuneupto119MeV.cm2/mg ?SEUimmuneupto119MeV.cm2/mg ?-55°Cto+125°Ctemperaturerange ?ESCCspecificationavailableonESCCwebsi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION TheHCC40109B(extendedtemperaturerange)andHCF40109B(intermediatetemperaturerange)aremonolithicintegratedcircuits,availablein16-leaddualin-lineplasticorceramicpackageandplasticmicropackage.TheHCC/HCF40109Bcontainsfourlow-to-high-voltagelevel-shiftingcir

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109B

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION TheHCC40109B(extendedtemperaturerange)andHCF40109B(intermediatetemperaturerange)aremonolithicintegratedcircuits,availablein16-leaddualin-lineplasticorceramicpackageandplasticmicropackage.TheHCC/HCF40109Bcontainsfourlow-to-high-voltagelevel-shiftingcir

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109B

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION HCF40109BisamonolithicintegratedcircuitfabricatedinMetalOxideSemiconductortechnologyavailableinDIPandSOPpackages. HCF40109Bcontainsfourlow-to-highvoltagelevelshiftingcircuits. ■INDIPENDENCEOFPOWERSUPPLYSEQUENCECONSIDERATIONS-VCCCANEXCEEDVDD

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109B

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION HCF40109BisamonolithicintegratedcircuitfabricatedinMetalOxideSemiconductortechnologyavailableinDIPandSOPpackages. HCF40109Bcontainsfourlow-to-highvoltagelevelshiftingcircuits. ■INDIPENDENCEOFPOWERSUPPLYSEQUENCECONSIDERATIONS-VCCCANEXCEEDVDD

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109BEY

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION HCF40109BisamonolithicintegratedcircuitfabricatedinMetalOxideSemiconductortechnologyavailableinDIPandSOPpackages. HCF40109Bcontainsfourlow-to-highvoltagelevelshiftingcircuits. ■INDIPENDENCEOFPOWERSUPPLYSEQUENCECONSIDERATIONS-VCCCANEXCEEDVDD

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109BEY

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION HCF40109BisamonolithicintegratedcircuitfabricatedinMetalOxideSemiconductortechnologyavailableinDIPandSOPpackages. HCF40109Bcontainsfourlow-to-highvoltagelevelshiftingcircuits. ■INDIPENDENCEOFPOWERSUPPLYSEQUENCECONSIDERATIONS-VCCCANEXCEEDVDD

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HCF40109BEY

QUADLOW-TO-HIGHVOLTAGELEVELSHIFTER

DESCRIPTION TheHCC40109B(extendedtemperaturerange)andHCF40109B(intermediatetemperaturerange)aremonolithicintegratedcircuits,availablein16-leaddualin-lineplasticorceramicpackageandplasticmicropackage.TheHCC/HCF40109Bcontainsfourlow-to-high-voltagelevel-shiftingcir

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MAX40109

PrecisionSignalConditioningAFEforPressureSensorApplications

GeneralDescription TheMAX40109isalow-power,precisionsensorinterfaceSoCthatincludesahigh-precision,programmableAnalogfrontend(AFE),Analog-to-DigitalConverter(ADC),calibrationmemory,anddigitalsignalprocessing.ItalsoincludesaDigital-to-AnalogConverter(DAC)withanou

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAX40109IATP+

PrecisionSignalConditioningAFEforPressureSensorApplications

GeneralDescription TheMAX40109isalow-power,precisionsensorinterfaceSoCthatincludesahigh-precision,programmableAnalogfrontend(AFE),Analog-to-DigitalConverter(ADC),calibrationmemory,anddigitalsignalprocessing.ItalsoincludesaDigital-to-AnalogConverter(DAC)withanou

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

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22+
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66900
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22+
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16900
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24+
NA
200000
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STM原廠目錄
24+
DIL-14;Flat-
96000
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23+
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5000
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10426
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24+
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33
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829
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10000
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更多HCC40109BKT供應(yīng)商 更新時(shí)間2025-2-5 14:10:00

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