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HCS08

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08

Microcontrollers

Overview TheMC9S08GB/GTaremembersofthelow-cost,high-performanceHCS08Familyof8-bitmicrocontrollerunits(MCUs).AllMCUsinthefamilyusetheenhancedHCS08coreandareavailablewithavarietyofmodules,memorysizes,memorytypes,andpackagetypes. Features Featureshavebeeno

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

HCS08

HCS08 Microcontrollers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

HCS08

Microcontrollers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

HCS08D

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS08D

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08DMSR

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08DMSR

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS08HMSR

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08HMSR

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS08K

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08K

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS08KMSR

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08KMSR

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS08MS

Radiation Hardened Quad 2-Input AND Gate

Description TheIntersilHCS08MSisaRadiationHardenedQuad2-InputANDGate.AhighonbothinputsforcetheoutputtoaHighstate.TheHCS08MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFam

Intersil

Intersil Corporation

HCS08MS

Radiation Hardened Quad 2-Input AND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS0803D

Electro-Magnetic Sound Generators

JLWORLD

JL World Company Limited.

HCS0803D

Value applying Rated Voltage

JLWORLD

JL World Company Limited.

HCS0803G

Electro-Magnetic Sound Generators

JLWORLD

JL World Company Limited.

HCS0805D

Value applying Rated Voltage

JLWORLD

JL World Company Limited.

詳細(xì)參數(shù)

  • 型號:

    HCS08

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened Quad 2-Input AND Gate

供應(yīng)商型號品牌批號封裝庫存備注價格
HAR
23+
SOP14
3500
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ISL
06+
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4283
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H
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200
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H
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66800
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HAR
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H
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fresscale
2023+環(huán)?,F(xiàn)貨
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H
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H
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4862
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詢價
H
21+
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7655
軍用單位指定合供方/只做原裝,正品現(xiàn)貨
詢價
更多HCS08供應(yīng)商 更新時間2024-12-28 11:10:00