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HCTS00HMSR

Radiation Hardened Quad2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS00K

Radiation Hardened Quad2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS00K

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCTS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCTS00KMSR

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCTS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCTS00KMSR

Radiation Hardened Quad2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS00MS

Radiation Hardened Quad2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS00MS

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCTS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCTS02D

Radiation Hardened Quad 2-Input NOR Gate

Description TheIntersilHCTS02MSisaRadiationHardenedQuad2-InputNORGate.AlowonbothinputsforcestheoutputtoaHighstate. TheHCTS02MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicF

Intersil

Intersil Corporation

HCTS02D

Radiation Hardened Quad2-Input NOR Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS02DMSR

Radiation Hardened Quad2-Input NOR Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HCTL-2017

  • 制造商：

    Broadcom Limited

  • 類別：

    集成電路（IC） > 專用

  • 包裝：

    管件

  • 應(yīng)用：

    編碼器至微處理器

  • 接口：

    8 位三態(tài)

  • 電壓 - 供電：

    4.5V ~ 5.5V

  • 封裝/外殼：

    16-DIP（0.300"，7.62mm）

  • 供應(yīng)商器件封裝：

    16-PDIP

  • 安裝類型：

    通孔

  • 描述：

    IC INTERFACE SPECIALIZED 16DIP

供應(yīng)商型號品牌批號封裝庫存備注價格
AVAGO
23+
16-PDIP
5000
原裝正品,假一罰十
 詢價
AVAGO
23+
16-PDIP
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
HP
22+
DIP16
5000
進口原裝!現(xiàn)貨庫存
 詢價
AVAGO
24+
16-PDIP
2789
全新原裝!絕對有貨!
 詢價
AVAGO
18+
16-PDIP
18730
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
 詢價
Broadcom Limited
24+
16-PDIP
35200
一級代理/放心采購
 詢價
Avago
24+
16-DIP
4598
詢價
AVAGO/安華高
2447
16-PDIP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
AVAGO/安華高
21+
16-PDIP
2366
百域芯優(yōu)勢 實單必成 可開13點增值稅
 詢價
BROADCOM
20+
DIP-16
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多HCT供應(yīng)商 更新時間2025-4-5 15:36:00

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