零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HCT574Q | HIGH-SPEED COMS LOGIC OCTAL D-TYPE FLIP-FLOP 3-STATE, POSITIVE-EDGE RIGGERED | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MediumPowerAmplier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI | ||
MediumPowerAmplifier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI |
詳細(xì)參數(shù)
- 型號:
HCT574Q
- 制造商:
TI
- 制造商全稱:
Texas Instruments
- 功能描述:
HIGH-SPEED COMS LOGIC OCTAL D-TYPE FLIP-FLOP 3-STATE, POSITIVE-EDGE RIGGERED
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
恒芯微 |
21+ |
100 |
全新原裝鄙視假貨15118075546 |
詢價 | |||
TI/德州儀器 |
QFN |
6698 |
詢價 | ||||
PHILIPS |
TSSOP16 |
6500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MOT |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
MOT |
2022 |
TSSOP |
1500 |
全新原裝現(xiàn)貨熱賣 |
詢價 | ||
MOT |
23+ |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
MOT |
23+ |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
HAR |
22+ |
SOP=16 |
3200 |
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電! |
詢價 | ||
HARRIS |
新 |
895 |
全新原裝 貨期兩周 |
詢價 | |||
23+ |
SOP |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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