首頁 >HCTS244KMSR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HCTS244KMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | |
HCTS244KMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | Hittite Hittite Microwave Corporation | Hittite | ||
ACTIVEBIASCONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=15A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsth | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=16A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細(xì)參數(shù)
- 型號：
HCTS244KMSR
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened Octal Buffer/Line Driver, Three-State
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
H |
18 |
CDIP |
200 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
H |
23+ |
CDIP |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ISL |
23+ |
65480 |
詢價 | ||||
24+ |
長期備有現(xiàn)貨 |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
H |
21+ |
CDIP |
645 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價 | ||
H |
QQ咨詢 |
CDIP |
82 |
全新原裝 研究所指定供貨商 |
詢價 | ||
H |
2318+ |
CDIP |
4862 |
只做進口原裝!假一賠百!自己庫存價優(yōu)! |
詢價 | ||
ISL |
06+ |
原廠原裝 |
4287 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
INTERSIL |
14+ |
原廠封裝 |
19 |
宇航IC只做原裝假一罰十 |
詢價 | ||
INTERSIL |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理 |
詢價 |
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