HEF4720VD中文資料飛利浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
HEF4720VD規(guī)格書(shū)詳情
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.
The use of LOCMOS gives the added advantage of very low stand-by power. The circuits can be directly interfaced with standard bipolar devices (TTL) without using special interface circuits. The memory operates from a single power supply.
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---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
23+ |
NA/ |
75 |
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24+ |
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880000 |
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詢(xún)價(jià) | ||
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23+ |
65480 |
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SOP16 |
275000 |
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68900 |
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22+ |
DIP16 |
8000 |
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PHI |
24+ |
DIP16 |
750 |
詢(xún)價(jià) | |||
PHILIPS/飛利浦 |
QQ咨詢(xún) |
CDIP |
826 |
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