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HF-452GRIS

GABINETE PARA TECLADO Y DISPLAY

Descripción ElHF-452esungabinetefabricadoconplástico,conespacioparauntecladonuméricotipotelefónicoconteclasespeciales.Tambiéntieneespacioparacolocarunaltavozyundisplay. Aplicaciones Elgabinetepuedeserusadoparahacerunaalarmaelectrónica.Consutecladosein

AGELECTRONICA

AG Electronica

HWS452

GaAsDC-6GHzSPDTSwitch

Description TheHWS452isaGaAsPHEMTMMICSPDTswitchoperatingatDC-6GHzinalowcostminiatureSON6L(2x3mm)plasticlead(Pb)freepackage.TheHWS452featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANPC

HWHexawave, Inc

漢威光電漢威光電股份有限公司

ICX452

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son

SonySony Corporation

索尼

ICX452AQ

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son

SonySony Corporation

索尼

ICX452AQF

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras

Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son

SonySony Corporation

索尼

IRF452

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF452

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF452

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP452

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP452

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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