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HI5801

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801AIJ

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801BIJ

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801JCM

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801KCM

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HM5801

PMUforPortableApplications

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRF5801

PowerMOSFET(Vdss=200V,Rds(on)max=2.2ohm,Id=0.6A)

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801PBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free ●Halogen-Free Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801TRPBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free ●Halogen-Free Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801TRPBF-TP

N-ChannelMOSFET200V,1.5A,0.7

Features *Vbs=200V e=1.5A ?Roson£0.7Q@Ves=10V

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

KSC5801

HighVoltageColorDisplayHorizontalDeflectionOutput(DamperDiodeBuiltIn)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MA5801

58VAsynchronousBuckConverter

GENERALDESCRIPTION TheMA5801isamonolithicasynchronousbuckregulator.Thedeviceintegrates110mΩ MOSFET,andprovides2Aofcontinuousloadcurrentoverawideinputvoltageof10Vto58V. Currentmodecontrolprovidesfasttransientresponseandcycle-bicyclecurrentlimit. Theinterna

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

MA5801ESA

58VAsynchronousBuckConverter

GENERALDESCRIPTION TheMA5801isamonolithicasynchronousbuckregulator.Thedeviceintegrates110mΩ MOSFET,andprovides2Aofcontinuousloadcurrentoverawideinputvoltageof10Vto58V. Currentmodecontrolprovidesfasttransientresponseandcycle-bicyclecurrentlimit. Theinterna

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

MAX5801

Ultra-Small,Dual-Channel,8-/10-/12-BitBufferedOutputDACswithInternalReferenceandI2CInterface

GeneralDescription TheMAX5800/MAX5801/MAX58022-channel,low-power,8-/10-/12-bit,voltage-outputdigital-to-analogconverters(DACs)includeoutputbuffersandaninternalreferencethatisselectabletobe2.048V,2.500V,or4.096V.TheMAX5800/MAX5801/MAX5802acceptawidesupplyvoltageran

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MCH5801

DC/DCConverterApplications

MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypewithanN-ChannelSilliconMOSFET(MCH3405)andaSchottkyBarrierDiode(SBS007M)containedinonepackagefacilitatinghigh-densitymounting. [MOSFET] ?LowON-resistance. ?Ultrahigh-speeds

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

MIC5801

4/8-BitParallel-InputLatchedDrivers

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

MIC5801

4/8-BitParallel-InputLatchedDrivers

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC5801BN

4/8-BitParallel-InputLatchedDrivers

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC5801BN

4/8-BitParallel-InputLatchedDrivers

GeneralDescription TheMIC5800/5801latcheddriversarehigh-voltage,highcurrentintegratedcircuitscomprisedoffouroreightCMOSdatalatches,abipolarDarlingtontransistordriverforeachlatch,andCMOScontrolcircuitryforthecommonCLEAR,STROBE,andOUTPUTENABLEfunctions. Theb

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC5801BV

4/8-BitParallel-InputLatchedDrivers

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    HFCT-5801A

  • 功能描述:

    光纖發(fā)射器、接收器、收發(fā)器 2x9 155Mb 3.3V IR Tx cvr Blk ExtTmp

  • RoHS:

  • 制造商:

    Omron Electronics

  • 產(chǎn)品:

    Transmitters

  • 數(shù)據(jù)速率:

    3.5 Gbps

  • 波長:

    850 nm

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更多HFCT-5801A供應(yīng)商 更新時(shí)間2024-12-26 16:45:00