首頁>HGT1S3N60C3DS>規(guī)格書詳情
HGT1S3N60C3DS中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
HGT1S3N60C3DS規(guī)格書詳情
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.
Features
? 6A, 600V at TC = +25°C
? 600V Switching SOA Capability
? Typical Fall Time - 130ns at TJ = +150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
產(chǎn)品屬性
- 型號(hào):
HGT1S3N60C3DS
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INTERSIL |
TO-263-2 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
har |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
INTERSIL |
18+ |
TO-263-2 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
INTERSIL |
24+ |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) | |||
INTERSIL |
23+ |
TO-263 |
8400 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-263 |
8400 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
24+ |
TO-263 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Intersil |
24+ |
TO-263 |
8866 |
詢價(jià) | |||
INTERSIL |
05+ |
原廠原裝 |
4384 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) |