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HGT1S3N60C3DS中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書

HGT1S3N60C3DS
廠商型號(hào)

HGT1S3N60C3DS

功能描述

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件大小

327.17 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二

更新時(shí)間

2025-1-9 15:50:00

HGT1S3N60C3DS規(guī)格書詳情

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

Features

? 6A, 600V at TC = +25°C

? 600V Switching SOA Capability

? Typical Fall Time - 130ns at TJ = +150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

產(chǎn)品屬性

  • 型號(hào):

    HGT1S3N60C3DS

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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