訂購數(shù)量 | 價格 |
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首頁>HGT4E20N60A4DS>詳情
HGT4E20N60A4DS_INTERSIL_IGBT 晶體管 TO-268深圳廊盛
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產品屬性
- 類型
描述
- 型號:
HGT4E20N60A4DS
- 功能描述:
IGBT 晶體管 TO-268
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商
- 企業(yè):
深圳廊盛科技有限公司
- 商鋪:
- 聯(lián)系人:
李先生
- 手機:
18682365538
- 詢價:
- 電話:
18682365538
- 地址:
深圳市福田區(qū)華強北街道上步工業(yè)區(qū)501棟410室
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