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HGTP2N120CND中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

HGTP2N120CND
廠商型號

HGTP2N120CND

功能描述

13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

文件大小

92.95 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-15 16:15:00

HGTP2N120CND規(guī)格書詳情

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).

Features

? 13A, 1200V, TC = 25°C

? 1200V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

? Thermal Impedance SPICE Model Temperature Compensating SABER? Model www.intersil.com

? Related Literature

??? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    HGTP2N120CND

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

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