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HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

Intersil

Intersil Corporation

HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP7N60A4D

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 34A 125W TO220AB

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD7N60A4S

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

Intersil

Intersil Corporation

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

YFW7N60A4

7A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HGTP7N60A4D

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.7V @ 15V，7A

  • 開關(guān)能量：

    55μJ（開），60μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    11ns/100ns

  • 測試條件：

    390V，7A，25 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220-3

  • 描述：

    IGBT 600V 34A 125W TO220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
INTERSIL
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
FAIRCHILD
23+
TO-220
9526
詢價
FAIRCHIL
24+
TO-220
8866
詢價
Intersil
23+
原廠原裝
1400
全新原裝
 詢價
仙童
06+
TO-220
5000
原裝庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
仙童/INTERSI
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
FAIRC
2020+
TO-220
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
fAIRCHILD
22+
TO220
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
FAIRCHILD仙童
23+
TO220AB
10000
公司只做原裝正品
 詢價
更多HGTP7N60A4D供應(yīng)商 更新時間2024-11-15 14:00:00

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