首頁>HGTP7N60C3>規(guī)格書詳情

HGTP7N60C3分立半導體產品的晶體管-UGBT、MOSFET-單規(guī)格書PDF中文資料

HGTP7N60C3
廠商型號

HGTP7N60C3

參數屬性

HGTP7N60C3 封裝/外殼為TO-220-3;包裝為管件;類別為分立半導體產品的晶體管-UGBT、MOSFET-單;產品描述:IGBT 600V 14A 60W TO220AB

功能描述

14A, 600V, UFS Series N-Channel IGBTs

文件大小

166.04 Kbytes

頁面數量

8

生產廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導體

中文名稱

飛兆/仙童半導體公司官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-5 11:12:00

HGTP7N60C3規(guī)格書詳情

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

? 14A, 600V at TC = 25°C

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

產品屬性

  • 產品編號:

    HGTP7N60C3D

  • 制造商:

    onsemi

  • 類別:

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2V @ 15V,7A

  • 開關能量:

    165μJ(開),600μJ(關)

  • 輸入類型:

    標準

  • 測試條件:

    480V,7A,50歐姆,15V

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應商器件封裝:

    TO-220-3

  • 描述:

    IGBT 600V 14A 60W TO220AB

供應商 型號 品牌 批號 封裝 庫存 備注 價格
FAIRCHI
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
INTERSIL
24+
35200
一級代理/放心采購
詢價
24+
N/A
79000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
Intersil
24+
TO-220
8866
詢價
FAIRCHILD
23+
TO-220
9526
詢價
Fairchild/ON
21+
TO220AB
13880
公司只售原裝,支持實單
詢價
INTERSIL
23+
TO-220
10000
公司只做原裝正品
詢價
INTERSIL
17+
TO-220
31518
原裝正品 可含稅交易
詢價
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現貨,可提供技術支持、樣品免費!
詢價
仙童/INTERSI
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現貨
詢價