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HIP6603B集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

HIP6603B
廠商型號(hào)

HIP6603B

參數(shù)屬性

HIP6603B 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為管件;類(lèi)別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Synchronous Rectified Buck MOSFET Drivers

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

258.029 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

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更新時(shí)間

2025-1-26 8:00:00

HIP6603B規(guī)格書(shū)詳情

The HIP6601B, HIP6603B and HIP6604B are high-frequency,

dual MOSFET drivers specifically designed to drive two power

N-Channel MOSFETs in a synchronous rectified buck converter

topology. These drivers combined with a HIP63xx or the ISL65xx

series of Multi-Phase Buck PWM controllers and MOSFETs form

a complete core-voltage regulator solution for advanced

microprocessors.

The HIP6601B drives the lower gate in a synchronous rectifier to

12V, while the upper gate can be independently driven over a range

from 5V to 12V. The HIP6603B drives both upper and lower gates

over a range of 5V to 12V. This drive-voltage flexibility provides

the advantage of optimizing applications involving trade-offs

between switching losses and conduction losses. The HIP6604B

can be configured as either a HIP6601B or a HIP6603B.

The output drivers in the HIP6601B, HIP6603B and HIP6604B

have the capacity to efficiently switch power MOSFETs at

frequencies up to 2MHz. Each driver is capable of driving a

3000pF load with a 30ns propagation delay and 50ns transition

time. These products implement bootstrapping on the upper gate

with only an external capacitor required. This reduces

implementation complexity and allows the use of higher

performance, cost effective, N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both MOSFETs

from conducting simultaneously.

Features

? Drives Two N-Channel MOSFETs

? Adaptive Shoot-Through Protection

? Internal Bootstrap Device

? Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

? Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages

? Dual Gate-Drive Voltages for Optimal Efficiency

? Three-State Input for Output Stage Shutdown

? Supply Undervoltage Protection

? QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No

Leads—Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

? Pb-Free (RoHS Compliant)

Applications

? Core Voltage Supplies for Intel Pentium? III, AMD? Athlon?

Microprocessors

? High Frequency Low Profile DC/DC Converters

? High Current Low Voltage DC/DC Converters

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    HIP6603BCB-T

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類(lèi)型:

    同步

  • 柵極類(lèi)型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    10.8V ~ 13.2V

  • 輸入類(lèi)型:

    非反相

  • 上升/下降時(shí)間(典型值):

    20ns,20ns

  • 工作溫度:

    0°C ~ 125°C(TJ)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

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