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HM1-6514B-9中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

HM1-6514B-9
廠商型號(hào)

HM1-6514B-9

功能描述

1024 x 4 CMOS RAM

文件大小

41.05 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-4 15:18:00

HM1-6514B-9規(guī)格書詳情

Description

The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.

On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.

Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time.

Data retention supply voltage and supply current are guaran teed over temperature.

Features

? Low Power Standby . . . . . . . . . . . . . . . . . . . 125μW Max

? Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max

? Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min

? TTL Compatible Input/Output

? Common Data Input/Output

? Three-State Output

? Standard JEDEC Pinout

? Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max

? 18 Pin Package for High Density

? On-Chip Address Register

? Gated Inputs - No Pull Up or Pull Down Resistors Required

產(chǎn)品屬性

  • 型號(hào):

    HM1-6514B-9

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    1024 x 4 CMOS RAM

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