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HM20N60A

the silicon N-channel Enhanced VDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM20N60F

thesiliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMG20N60A

20A,600Vinsulatedgatebipolartransistor

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IKB20N60T

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKB20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKB20N60TA

600Vlowlossswitchingseriesthirdgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60T

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60T

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60T

IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60TA

IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKP20N60TA

600Vlowlossswitchingseriesthirdgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60T

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60T

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60T

IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60TA

DesignedforDC/ACconvertersforAutomotiveApplication

LowLossDuoPack:IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ?AutomotiveAECQ101qualified ?DesignedforDC/ACconvertersforAutomotiveApplication ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDP20N60B

HighVoltageIGBTwithoptionalDiode

VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr

IXYS

IXYS Corporation

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H
23+
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10000
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HMSEMI
2022+
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50000
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-
23+
NA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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H
23+
TO-3P
6000
原裝正品,支持實(shí)單
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HMSEMI
23+
TO-3P
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
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HMSEMI
23+
TO-3P
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
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H
24+
TO-3P
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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DFN2X2-6L
360000
交期準(zhǔn)時(shí)服務(wù)周到
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臺(tái)產(chǎn)
09+
TO-252
5000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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臺(tái)產(chǎn)
23+
原裝正品現(xiàn)貨
10000
TO-252
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更多HM20N60A供應(yīng)商 更新時(shí)間2025-1-18 14:30:00