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IRFP254

PowerMOSFET(Vdss=250V,Rds(on)=0.14ohm,Id=23A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP254

StandardPowerMOSFET-N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP254

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP254

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP254

HEXFET?PowerMOSFET

TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmoutinghole.Italsoprovidesgreatercreepagedistancebetweenpinstomee

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP254

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254A

$GYDQFHG3RZHU026)(7

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowRDS(ON):0.108?(Typ.)

IRF

International Rectifier

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CarlingTechnologies
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HMSEMI
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TO-252
8650
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