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IRFS4410

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFS4410

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS4410PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow

IRF

International Rectifier

IRFS4410PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS4410Z

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS4410Z

100VN-ChannelMOSFET

Benefits *ImprovedGate,AvalancheandDynamicdV/dt Ruggedness *FullyCharacterizedCapacitanceandAvalanche SOA *EnhancedbodydiodedV/dtanddI/dtCapability *Lead-Free *RoHSCompliant,Halogen-Free *VDS=100V *ID(atVGS=10V)=97A *RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFS4410ZPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow

IRF

International Rectifier

IRFSL4410

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFSL4410

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL4410PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow

IRF

International Rectifier

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VBSEMI
19+
SOP-8
23800
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BV
24+
SOP8
66500
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VBsemi(臺灣微碧)
2447
SO-8
105000
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50000
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HM
23+
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50000
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VBSEMI臺灣微碧
23+
SO-8
22820
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VBsemi
21+
SOP8
10065
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VBsemi
24+
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9000
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24+
SOP8
60000
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VB
24+
SOP8
663300
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更多HM4410供應(yīng)商 更新時(shí)間2025-4-24 16:04:00

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