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HM6408

Marking：6408；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HX6408

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-EFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-EFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-EHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-EHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-ENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-ENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-ERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-ERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

供應商型號品牌批號封裝庫存備注價格
HM
24+
SOT-23-6L
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
HM
23+
SOT-23-6L
50000
原裝正品 支持實單
 詢價
NK/南科功率
SOT23-6L
360000
交期準時服務周到
 詢價
Hmsemi
TO-220F
22+
6000
十年配單,只做原裝
 詢價
-
23+
NA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
Hmsemi
23+
TO-220F
6000
原裝正品，支持實單
 詢價
Hmsemi
23+
TO-220F
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
Hmsemi
23+
TO-220F
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
Hmsemi
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
BITECH
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多HM6408供應商 更新時間2025-4-7 15:16:00

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