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HM6N10R

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

LMTM6N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTD6N10

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE,DPAKFORSURFACEMOUNTORINSERTIONMOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD6N10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.400OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N10E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

供應商型號品牌批號封裝庫存備注價格
GTM
23+
SOT-223
76456
原裝正品現(xiàn)貨
 詢價
GTM
25+
SOT-223
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
GTM
23+
NA/
2000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
GTM
23+
SOT-223
50000
原裝正品 支持實單
 詢價
GTM
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
GTM
2022
SOT-223
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Hmsemi
TO-220
22+
6000
十年配單,只做原裝
 詢價
Hmsemi
23+
TO-220
6000
原裝正品，支持實單
 詢價
HMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
HMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多HM6N10R供應商 更新時間2025-3-9 17:10:00

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