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IRF510N

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.289?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF510N

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技威世科技半導體

IRF510N

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF

International Rectifier

IRF510N

RepetitiveAvalancheRated

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF510N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF510N

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

IRF

International Rectifier

IRF510PBF

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF510PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導體

IRF510S

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

IRF

International Rectifier

IRF510S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技威世科技半導體

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11360
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16
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3660
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23+
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6500
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23+
Chip
6500
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24+
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3600
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更多HMC-APH510-SX供應商 更新時間2025-3-13 14:14:00