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IRF330

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF330

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF330

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF330

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF330

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrentID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Highvoltage,highspeedapplications ?Off-lineswitchingpowersupplies,UPS,ACandDC motorco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFE330

REPETITIVEAVALANCHEANDdv/dtRATED

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    HMC330

  • 制造商：

    HITTITE

  • 制造商全稱：

    Hittite Microwave Corporation

  • 功能描述：

    GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz

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2000
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HITTITE
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HXY MOSFET(華軒陽電子)
23+
SOP-8
980
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2017+
SMD
1585
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HITTITE
24+
SMD
12800
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HITTITE
24+
N/A
90000
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ADI
20+
模具
1128
無線通信IC,大量現(xiàn)貨!
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ADI
20+
射頻模具
3000
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AD
1824+
NA
16
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ADI
22+
Die
9000
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更多HMC330供應(yīng)商 更新時(shí)間2025-4-17 9:04:00

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