HMN1288DV中文資料HANBIT數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The HMN1288DV Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits. The HMN1288DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry, which constantly monitors the single 3.3V, supply for an outof-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.

The HMN1288DV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

? Access time : 70, 85, 120, 150 ns

? High-density design : 1Mbit Design

? Battery internally isolated until power is applied

? Industry-standard 32-pin 128K x 8 pinout

? Unlimited write cycles

? Data retention in the absence of VCC

? 10-years minimum data retention in absence of power

? Automatic write-protection during power-up/power-down cycles

? Data is automatically protected during power loss

? Conventional SRAM operation; unlimited write cycles