HN58V66AT-10SR中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

Features

? Single supply: 2.7 to 5.5 V

? Access time:

?- 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

?- 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

? Power dissipation:

?- Active: 20 mW/MHz (typ)

?- Standby: 110 μW (max)

? On-chip latches: address, data, CE, OE, WE

? Automatic byte write: 10 ms (max)

? Automatic page write (64 bytes): 10 ms (max)

? Ready/Busy

? Data polling and Toggle bit

? Data protection circuit on power on/off

? Conforms to JEDEC byte-wide standard

? Reliable CMOS with MNOS cell technology

? 105 erase/write cycles (in page mode)

? 10 years data retention

? Software data protection

? Write protection by RES pin (only the HN58V66A series)

? Operating temperature range:

?- HN58V65AI/HN58V66AI Series: ?40 to +85°C

?- HN58V65A-SR/HN58V66A-SR Series: ?20 to +85°C

? There are also lead free products.