| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HPLR3103 | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | |
HPLR3103 | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
HighPerformanceRelativeHumidityandTemperatureSensor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features ?Humidityrange:0to100RH ?Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) ?Hydrophobicmembrane,IP67rating ?14-bitresolution:0.01RH,typical ?Independentprogrammableresolutionsettings:8, 10,12,14bits ?FastRHresponsetime:1secondtimeconstant, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorModule Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Half-BridgeFredFETandIntegratedDriver Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | InterFET InterFET Corporation | InterFET | ||
PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號：
HPLR3103
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
06+ |
原廠原裝 |
6050 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INTERSIL |
21+ |
35200 |
一級代理/放心采購 |
詢價 | |||
F |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
F |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價 | ||
VB |
TO-252 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
INTERSIL |
23+ |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
F |
23+ |
TO-252 |
6000 |
原裝正品，支持實單 |
詢價 | ||
F |
23+ |
TO-252 |
8400 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
F |
23+ |
TO-252 |
8400 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
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