首頁 >HRH18N60BNW>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeFastIntrinsicDiodeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeFastIntrinsicDiodeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeFastIntrinsicDiodeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HRMICRO/華瑞微 |
24+ |
TO-247 |
5000 |
原裝正品保障優(yōu)勢供應(yīng) |
詢價(jià) |
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