HS-303BEH中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書
HS-303BEH規(guī)格書詳情
Features
? QML, per MIL-PRF-38535
? Radiation performance
○ Total dose: 3x105rad(Si)
○ SEE: For LET = 60MeV?cm2/mg at 60° incident
angle, <150pC charge transferred to the output of
an off switch (based on SOI design calculations)
? No latch-up, dielectrically isolated device islands
? Pinout and functionally compatible with Renesas
HS-303RH and HI-303 series analog switches
? Analog signal range equal to the supply voltage
range
? Low leakage: 100nA (max, post-rad)
? Low rON: 70Ω (max, post-rad)
? Low standby supply current: +150μA/-100μA
(max, post-rad)
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---|---|---|---|---|---|---|---|
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589220 |
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詢價(jià) | ||||
H |
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CDIP |
312 |
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2018 |
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300 |
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詢價(jià) | ||
進(jìn)口原裝 |
23+ |
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1004 |
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24+ |
SO-20 |
2250 |
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30000 |
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詢價(jià) | ||
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22+23+ |
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68964 |
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詢價(jià) | ||
SIPEX |
21+ |
DIP |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
SIPEX |
23+ |
DIP |
8560 |
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詢價(jià) | ||
23+ |
65480 |
詢價(jià) |