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MTB15N06E

TMOSPOWERFET15AMPERES

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB15N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB15N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB15N06V

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB15N06V

TMOSPOWERFET15AMPERES

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD15N06

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD15N06

TMOSPOWERFET15AMPERES60VOLTS

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD15N06V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTD15N06V

PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD15N06V

TMOSPOWERFET15AMPERES60VOLTS

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應商型號品牌批號封裝庫存備注價格
HOMSEMI
2022+
TO-252
32500
原廠代理 終端免費提供樣品
 詢價
HOMSEMI
23+
TO-252
6000
原裝正品，支持實單
 詢價
HOMSEMI
23+
TO-252
6800
專注配單,只做原裝進口現貨
 詢價
HOMSEMI
23+
TO-252
6800
專注配單,只做原裝進口現貨
 詢價
HOMSEMI
23+
TO-252
50000
全新原裝正品現貨,支持訂貨
 詢價
HOMSEMI
23+
TO-252
79999
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
HOMSEMI
23+
NA/
53250
原裝現貨,當天可交貨,原型號開票
 詢價
HOMSEMI
22+23+
TO252
72909
絕對原裝正品現貨,全新深圳原裝進口現貨
 詢價
HIECUBE
1844+
DIP
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
HIECUBE(高能立方)
2112+
Through Hole
105000
15個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現貨,長
 詢價
更多HS15N06DA供應商 更新時間2025-1-29 14:02:00

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