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IIRFR2407

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IK2407SA

0.25WattIKSeries

XPPOWER

XP Power Limited

IRFR/U2407

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407

PowerMOSFET

LUCKY-LIGHT

Lucky Light Electronic

IRFR2407

PowerMOSFET

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ?Surfa

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR2407

AdvancedProcessTechnology

IRF

International Rectifier

IRFR2407

PowerMOSFET(Vdss=75V,Rds(on)=0.026ohm,Id=42A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2407

SurfaceMount(IRFR2407)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407PBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2407PBF

ADVANCEDPROCESSTECHNOLOGY

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407PBF

ADVANCEDPROCESSTECHNLOLGY

IRF

International Rectifier

IRFR2407PBF

SurfaceMount

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407TRL

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2407TRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR2407TRR

SurfaceMount(IRFR2407)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2407

PowerMOSFET(Vdss=75V,Rds(on)=0.026ohm,Id=42A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFU2407

PowerMOSFET

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ?Surfa

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2407

PowerMOSFET

LUCKY-LIGHT

Lucky Light Electronic

IRFU2407

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    HS2407

  • 功能描述:

    Peripheral IC

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THCOM
1736+
SOP
15238
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MICROSEMI
24+
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2050
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10000
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7300
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MSC
23+
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7300
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MicrosemiPowerProductsGr
23+
SCHOTTKYRECTIFIER240A30V
1701
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Microsemi
1942+
N/A
98
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MICROSEMI
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PAK
96
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Microsemi Corporation
24+
HALF-PAK
9350
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6000
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更多HS2407供應(yīng)商 更新時(shí)間2025-1-19 10:30:00