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首頁 >HSB10050BR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
10050	文件：126.42 Kbytes Page：1 Pages	NylonPCBSupports-ImperialSpacing	HeycoHeyco. ?？?/span>	Heyco
10050	文件：769.53 Kbytes Page：3 Pages	InductiveSensor Features ■?6.5mm,smoothbarrel ■Stainlesssteel,1.4404 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,Exzone0 ■ATEXcategoryII1D,Exzone20 ■SIL2(LowDemandMode)acc.toIEC61508, PLcacc.toISO13849-1withHFT0	TURCKTurck Inc. 圖爾克德國圖爾克集團(tuán)公司	TURCK
10050BQ	文件：143.45 Kbytes Page：2 Pages	5.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司	ZSELEC
10050-C	文件：184.9 Kbytes Page：7 Pages	10050ExtremeCompatibleTransceiverSFP10/100/1000Base-T(RJ45,Copper,100m) Features ATGBICS10050SFPoperatesonstandardCategory5unshieldedtwisted-paircoppercablingoflinklengthsupto100m. Extreme1000BASE-TSFPmodulessupport10/100/1000autonegotiationandautoMDI/MDIX. OurproductmeetsthespecificationofExtreme10050=andweproudlyofferacompa	ATGBICS ATGBICS by Approved Technology	ATGBICS
10050LVR	文件：60.86 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT10050JLC	文件：39.52 Kbytes Page：2 Pages	PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT10050JN	文件：60.09 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT10050JVFR	文件：68.41 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.	ADPOW Advanced Power Technology	ADPOW
APT10050JVFR	文件：70.95 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody	ADPOW Advanced Power Technology	ADPOW
APT10050JVR	文件：67.95 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT10050LLC	文件：68.49 Kbytes Page：2 Pages	PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT10050LVFR	文件：67.62 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.	ADPOW Advanced Power Technology	ADPOW
APT10050LVFR	文件：327.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
APT10050LVFR	文件：108.31 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?IdenticalSpecific	ADPOW Advanced Power Technology	ADPOW
APT10050LVR	文件：326.39 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
APT10050LVR	文件：60.86 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	ADPOW Advanced Power Technology	ADPOW
DEM10050C	文件：107.75 Kbytes Page：1 Pages	10.3x10.3mmMax.square,5.0mmMax.height.	Toko TOKO, Inc	Toko
DVCR10050-LF	文件：271.86 Kbytes Page：3 Pages	ELECTROLYTIC-85?C	DUBILIER dubilier	DUBILIER
DVJL10050-LF	文件：262.3 Kbytes Page：2 Pages	SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL	DUBILIER dubilier	DUBILIER
DVJL10050-LF	文件：262.3 Kbytes Page：2 Pages	SMD-105?CLOWIMPEDANCE	DUBILIER dubilier	DUBILIER

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詳細(xì)參數(shù)

型號：
HSB10050BR
制造商：
Farnell/Pro-Power
功能描述：
HEATSHRINK 9.5MM BROWN 10M
制造商：
pro-power
功能描述：
HEATSHRINK, 9.5MM, BROWN, 10M

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市賽美科科技有限公司	HSB100-6	SEMIHOW		2KTaping	8560	一級代理原裝正品假一罰十價(jià)格優(yōu)勢長期供貨	詢價(jià)
深圳市明嘉萊科技有限公司	HSB100-6	SEMIHOW	12+	TO92	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	HSB10-090-RC	ALLIED	2021	SMD0805	93771	現(xiàn)貨庫存一站式配套元器件	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	HSB100SATBK	StarTech.com	22+		10000	原裝現(xiàn)貨支持實(shí)單	詢價(jià)

更多HSB10050BR供應(yīng)商更新時(shí)間2024-12-22 9:30:00

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