首頁(yè) >HSC276TRF-E>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforDetector | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features ●Highforwardcurrent,Lowcapacitance. ●HSM276ASRwhichisinterconnectedinseriesconfiguration isdesignedforbalancedmixeruse. ●MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276SRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetectorandMixer Features ?Highforwardcurrent,Lowcapacitance. ?HSM276SRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features ?Highforwardcurrent,Lowcapacitance. ?HSM276ASRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SiliconSchottkyBarrierDiodeforMixer Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetectorandMixer Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforMixer Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforMixer Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
TriplePLLFieldProgrammableVCXOClockSynthesizer | ICSTChina Resources Microelectronics Limited Limited 華潤(rùn)微電子華潤(rùn)微電子有限公司 | ICST | ||
TriplePLLFieldProgrammableVCXOClockSynthesizer | ICSTChina Resources Microelectronics Limited Limited 華潤(rùn)微電子華潤(rùn)微電子有限公司 | ICST | ||
TriplePLLFieldProgrammableVCXOClockSynthesizer | ICSTChina Resources Microelectronics Limited Limited 華潤(rùn)微電子華潤(rùn)微電子有限公司 | ICST |
詳細(xì)參數(shù)
- 型號(hào):
HSC276TRF-E
- 制造商:
Renesas Electronics Corporation
- 功能描述:
SMALL SIGNAL DIODE - LEAD FREE
- 功能描述:
SMALL SIGNAL DIODE - LEAD FREE - Tape and Reel
- 制造商:
Renesas Electronics
- 功能描述:
Cut Tape
- 制造商:
Renesas
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SOD-523 |
23+ |
RENESAS |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SOD-523 |
23+ |
RENESAS |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
HITACHI/日立 |
23+ |
12000 |
詢價(jià) | ||||
RENESAS瑞薩/HITACHI日立 |
24+ |
SOD-5230603 |
366000 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
HITACHI |
16+ |
原廠封裝 |
999999 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
RENESAS |
24+ |
0603 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
SOD-523 |
24190 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
Bychip/百域芯 |
21+ |
SOD523 |
30000 |
優(yōu)勢(shì)供應(yīng) 品質(zhì)保障 可開13點(diǎn)發(fā)票 |
詢價(jià) | ||
MSV/萌盛微 |
23+ |
SOD523 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
SOD-523 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
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