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IM840C

Directpintopindrop-inreplacementforindustry-standardpackages

ILSI

ILSI America LLC

IRC840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRC840PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRF840

PowerMOStransistorAvalancheenergyrated

DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF840

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF840

N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF840

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    HSM840

  • 制造商：

    MICROSEMI

  • 制造商全稱(chēng)：

    Microsemi Corporation

  • 功能描述：

    8 Amp Schottky Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Microsemi
19+
DO-214AB
200000
詢(xún)價(jià)
Microsemi
20+
DO-214AB
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
MICROSEMI
1809+
DO-214
3675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
Microsemi
24+
DO-214AB
88000
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
MICROSEMI/美高森美
2019+PB
DO-214AB
88000
大量庫(kù)存-特價(jià)
 詢(xún)價(jià)
MICROSEMI/美高森美
新年份
DO-214AB
88000
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實(shí)單帶接受價(jià)來(lái)談!
 詢(xún)價(jià)
Microsemi
23+
DO-214AB
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
Microsemi
23+
DO-214AB
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
24+
N/A
58000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
更多HSM840供應(yīng)商 更新時(shí)間2025-4-23 15:14:00

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