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HSMS-2807

Surface Mount RF Schottky Barrier Diodes

Description/Applications TheseSchottkydiodesarespecificallydesignedforbothanaloganddigitalapplications.Thisseriesoffersawiderangeofspecificationsandpackageconfigurationstogivethedesignerwideflexibility.TypicalapplicationsoftheseSchottkydiodesaremixing,detectin

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

IIRF2807

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIRF2807Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF2807

PowerMOSFET(Vdss=75V,Id=82A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF2807

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF2807L

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807L

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807L

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF2807L

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807L

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807LPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807LPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807PBF

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF2807S

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    HSMS-2807

  • 制造商:

    AGILENT

  • 制造商全稱:

    AGILENT

  • 功能描述:

    Surface Mount RF Schottky Barrier Diodes

供應商型號品牌批號封裝庫存備注價格
AVAGO安華高/AGILENT安捷
24+
SOT-143SOT-23-4
7400
新進庫存/原裝
詢價
HP
23+
SOT-143
31000
全新原裝現(xiàn)貨
詢價
HP
24+
2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
詢價
AVAGO
13
SOT143
6000
絕對原裝自己現(xiàn)貨
詢價
AGILENT
1922+
SOT-143
35689
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
AVAGO
17+
SOT-143
6200
100%原裝正品現(xiàn)貨
詢價
AVAGO
24+
SOT143
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
AVAGO
22+23+
SOT-143
43903
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
AGILENT
21+
SOT-143
12588
原裝正品,自己庫存 假一罰十
詢價
更多HSMS-2807供應商 更新時間2025-1-11 14:30:00