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IRF640

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640FP

N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640FP

IRF640FP18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640L

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    HT640

  • 制造商：

    HOLTEK

  • 制造商全稱：

    Holtek Semiconductor Inc

  • 功能描述：

    3(18) Series of Encoders

供應(yīng)商型號品牌批號封裝庫存備注價格
HOLTEK
24+/25+
468
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
HOLTEK/合泰
24+
65230
詢價
HOLTEK/合泰
23+
SOP24
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
HT
23+
DIP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
HOLTEK/合泰
23+
SOP24
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
HOLTEK/合泰
24+
NA/
1402
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
HOLTEK/合泰
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HOLTEK/合泰
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HOLTEK/合泰
24+
SOP
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
HARTING/浩亭
24+
SOT23-6
60000
全新原裝現(xiàn)貨
 詢價
更多HT640供應(yīng)商 更新時間2025-4-25 18:25:00

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