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HUF75307T3ST中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HUF75307T3ST
廠商型號(hào)

HUF75307T3ST

功能描述

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

文件大小

325.25 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-13 14:08:00

HUF75307T3ST規(guī)格書(shū)詳情

This N-Channel power MOSFET is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75307.

Features

? 2.6A, 55V

? Ultra Low On-Resistance, rDS(ON) = 0.090?

? Diode Exhibits Both High Speed and Soft Recovery

? Temperature Compensating PSPICE? Model

? Thermal Impedance SPICE Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75307T3ST

  • 功能描述:

    MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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