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HUF76121D3中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HUF76121D3
廠(chǎng)商型號(hào)

HUF76121D3

功能描述

20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

文件大小

361.17 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠(chǎng)商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-3 22:30:00

HUF76121D3規(guī)格書(shū)詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Features

? Logic Level Gate Drive

? 20A, 30V

? Ultra Low On-Resistance, rDS(ON) = 0.023?

? Temperature Compensating PSPICE? Model

? Temperature Compensating SABER? Model

? Thermal Impedance SPICE Model

? Thermal Impedance SABER Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF76121D3

  • 功能描述:

    MOSFET 20a 30V N-Ch Logic Level 0.023Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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